Year: 2016
Type: article
Abstract: Reverse-biased PbSnTe/PbTe double heterojunction diodes uniquely exhibit negative resistance. This property is assumed to originate from point defects in the deep levels of the diode crystal structure.
Source: Results in Physics
Authors: Arata Yasuda, Ken Suto, Jun-ichi Nishizawa
Language: English
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $1,920
OpenAlex ID: W2252071649