Work

On-Chip Integrated, Silicon–Graphene Plasmonic Schottky Photodetector with High Responsivity and Avalanche Photogain

Year: 2016

Type: article

Abstract: We report an on-chip integrated metal graphene-silicon plasmonic Schottky photodetector with 85 mA/W responsivity at 1.55 μm and 7% internal quantum efficiency. This is one order of magnitude higher than metal-silicon Schottky photodetectors operated in the same conditions. At a reverse bias of 3 V, we achieve avalanche multiplication, with 0.37A/W responsivity and avalanche photogain ∼2. This paves the way to graphene integrated silicon photonics.

Source: Nano Letters

DOI: 10.1021/acs.nanolett.5b05216

Authors: Ilya Goykhman, Ugo Sassi, Boris Desiatov, Noa Mazurski, Silvia Milana, Domenico de Fazio, Anna Eiden, Jacob Khurgin, Joseph Shappir, Uriel Levy, Andrea C. Ferrari

Institutions: University of Cambridge, Hebrew University of Jerusalem, Johns Hopkins University

Language: English

Topic: Plasmonic and Surface Plasmon Research

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $4,500

Funders: Engineering and Physical Sciences Research Council, European Research Council, Seventh Framework Programme

Awards: Engineering van der Waals heterostructures: from atomic level layer-by-layer assembly to printable innovative devices, Graphene Flexible Electronics and Optoelectronics, EPSRC Centre for Doctoral Training in Graphene Technology, G516966722, G5849335364, Graphene Flexible Electronics and Optoelectronics: Bridging The Gap Between Academia and Industry, G6246885945, G6740242506, Highly conductive Ultraflexible Graphene

OpenAlex ID: W2266327108

FWCI: 17.09

Cites: 112

Cited by: 336

Related to: 10