Work

FP-LAPW calculations of ground state properties for AlN, GaN and InN compounds

Year: 2008

Type: article

Authors: B. Daoudi, M. Sehil, A. Boukraa, H. Abid

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2266975039

FWCI: 0.218

Cites:

Cited by: 4

Related to: 10