Quantitative Stress Measurements of Bulk Microdefects in Multicrystalline Silicon
Year: 2009
Type: article
Abstract: In this work, inclusions of silicon carbide and silicon nitride in multicrystalline silicon are investigated experimentally by photoelasticity and theoretically by numerical simulation in a finite-element model. Large tensile stresses were observed in experiment at the interface from silicon carbide to silicon while silicon nitride induced much lower stresses. The results of the finite-element model indicate that the stresses are induced while cooling during crystallization, by the mismatch of coefficients of thermal expansion.
Source: EU PVSEC
Authors: Schoenfelder, S., Sampson, A., Ganapati, V., Koepge, R., Bagdahn, J., Buonassisi, T.
Institution: Fraunhofer-Gesellschaft
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2273271694