Work

Few-Layer MoS2 p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation

Year: 2016

Type: article

Source: ACS Nano

DOI: 10.1021/acsnano.5b06529

Authors: Ankur Nipane, Debjani Karmakar, Naveen Kaushik, Shruti Karande, Saurabh Lodha

Institutions: Indian Institute of Technology Bombay, Bhabha Atomic Research Centre

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: Confederation of Indian Industry, Department of Science and Technology, Ministry of Science and Technology, India

OpenAlex ID: W2274496440

FWCI: 19.34

Cites: 33

Cited by: 404

Related to: 9