Work

Topological modification of the electronic structure by Bi-bilayers lying deep inside bulk Bi 2 Se 3

Year: 2016

Type: article

Abstract: We observe the modified surface states of an epitaxial thin film of a homologous series of (Bi2)m(Bi2Se3)n, as a topological insulator (TI), by angle-resolved photoemission spectroscopy measurements. A thin film with m : n = 1 : 3 (Bi8Se9) has been grown with Bi2 bilayers embedded every other three quintuple layers (QLs) of Bi2Se3. Despite the reduced dimension of continuous QLs due to the Bi2 heterolayers, we find that the topological surface states stem from the inverted Bi and Se states and the topologically nontrivial structures are mainly based on the prototype of 3D TI Bi2Se3 without affecting the overall topological order.

Source: Journal of Physics Condensed Matter

DOI: 10.1088/0953-8984/28/8/085002

Authors: Paengro Lee, Jinwoong Kim, Jin Gul Kim, Min-tae Ryu, Hee-min Park, Namdong Kim, Yongsam Kim, Nam-Suk Lee, Nicholas Kioussis, Seung-Hoon Jhi, Jinwook Chung

Institutions: Pohang University of Science and Technology, California State University System, California State University, Northridge, Pohang Accelerator Laboratory

Language: English

Topic: Topological Materials and Phenomena

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: bronze

Funders: National Science Foundation, National Research Foundation, Ministry of Science, ICT and Future Planning, National Research Foundation of Korea, California State University, Northridge, Division of Materials Research

Awards: PREM - Computational Research and Education for Emergent Materials, G1798545643, G1810245079, G2115807777, G2521427100, G2756251027, G2975730310, G372945793, G6852220064, G7746278364, G8518901335

OpenAlex ID: W2277603455

FWCI: 0.473

Cites: 30

Cited by: 3

Related to: 10