A Dynamically Configurable Silicon Nanowire Field Effect Transistor based on Electrically Doped Source/Drain
Year: 2014
Type: preprint
Abstract: In this article, we present a configurable field-effect transistor (FET), where not only polarity (n- and p-type), but the conduction mechanism of a FET can also be configured dynamically. As a result, we can have both types of devices, high-performance MOSFET and low-power TFET, for computational and power efficient system on chip (SoC) products. The calibrated 3D-TCAD simulation results validate characteristics and functionalities of the configurable FET, and showed good consistency with the static conventional MOSFET (or TFET).
Source: arXiv (Cornell University)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2277869760