Work

Structural and microstructural characteristics of B-doped PbTe semiconductor

Year: 2006

Type: article

Abstract: The main task of this paper was accurate determination of structural and microstructural parameters of B-doped PbTe semiconductor ("p" type).Four samples (undoped PbTe, and three doped with initial B contents: 1 %, 3 % and 8 %) were synthesized using the Bridgman method and analysed using X-ray powder diffraction (XRD) technique.Structural features were obtained using the Rietveld method and microstructural by diffraction-line broadening methods.Microstructural measurements contain both crystallite domain sizes and microstrain calculations obtained by the Warren-Averbach and the simplified integral-breadth methods.

Source: Journal of Minerals and Materials Characterization and Engineering

DOI: 10.4236/jmmce.2006.52010

Author: Jovica N. Stojanovic

Institution: Institute for Technology of Nuclear and other Mineral Raw Materials

Language: English

Topic: X-ray Diffraction in Crystallography

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: diamond

Funder: Serbian Academy of Sciences and Arts

OpenAlex ID: W2281592236

FWCI: 0.192

Cites: 3

Cited by: 3

Related to: 10