Work

Design of InGaAsN/GaAs quantum well photodetector

Year: 2009

Type: report

Source: DR-NTU (Nanyang Technological University)

Author: Wen Li

Language: English

Topic: Advanced Semiconductor Detectors and Materials

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2282897401

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