Work

Robustness in short-circuit Mode of SiC MOSFETs

Year: 2015

Type: conference-paper

Source: PCIM Europe: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM Europe)

Authors: Cheng Chen, Denis Labrousse, Stéphane Lefebvre, Mickaël Petit, Cyril Buttay, Hervé Morel

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W2285221601

FWCI: 6.767

Cites:

Cited by: 21

Related to: 10