Work

I-V and C-V methods to extract Al/polysilicon Schottky diode parameters

Year: 2005

Type: conference-paper

Authors: F. Boulgamh, A. Telia, Mohamed Remram, Abdelbaki Djouambi

Institutions: Larbi Ben M'hidi University of Oum El Bouaghi, University Frères Mentouri Constantine 1

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2291312284

FWCI:

Cites: 7

Cited by: 1

Related to: 10