Work

Effect of Metal Gate Granularity Induced Random Fluctuations on Si Gate-All-Around Nanowire MOSFET 6-T SRAM Cell Stability

Year: 2016

Type: article

Source: IEEE Transactions on Nanotechnology

DOI: 10.1109/tnano.2016.2515638

Authors: Mohit Bajaj, Kaushik Nayak, Suresh Gundapaneni, Valipe Ramgopal Rao

Institutions: Indian Institute of Technology Hyderabad, Indian Institute of Technology Jodhpur, Indian Institute of Technology Bombay

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2295793954

FWCI: 1.067

Cites: 19

Cited by: 16

Related to: 10