Investing the effectiveness of retention performance in a non-volatile floating gate memory device with a core-shell structure of CdSe nanoparticles
Year: 2016
Type: article
Source: Electronic Materials Letters
Institutions: Sungkyunkwan University, Samsung (South Korea), Hanyang University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2299656978