Work

Low‐Voltage Complementary Electronics from Ion‐Gel‐Gated Vertical Van der Waals Heterostructures

Year: 2016

Type: article

Abstract: Low-voltage complementary circuits comprising n-type and p-type van der Waals heterojunction vertical field-effect transistors (VFETs) are demonstrated. The resulting VFETs possess high on-state current densities (>3000 A cm(-2) ) and on/off current ratios (>10(4) ) in a narrow voltage window (<3 V).

Source: Advanced Materials

DOI: 10.1002/adma.201506450

Authors: Yongsuk Choi, Junmo Kang, Deep Jariwala, Moon Sung Kang, Tobin J. Marks, Mark C. Hersam, Jeong Ho Cho

Institutions: Northwestern University, Sungkyunkwan University, Soongsil University

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

Funders: National Science Foundation, U.S. Department of Energy, Northwestern University, Center for Advanced Soft Electronics, Materials Research Science and Engineering Center, Harvard University, Division of Materials Research, Division of Emerging Frontiers in Research and Innovation, Argonne National Laboratory

Awards: G1179596829, G2379832748, G2491707747, G255020052, G318734614, G4712878820, G4847720737, G5755252270, G6066762027, G7178204, CEMRI: Multifunctional Nanoscale Material Structures, ARGONNE-NORTHWESTERN SOLAR ENERGY RESEARCH (ANSER) CENTER -- EFRC

OpenAlex ID: W2303874213

FWCI: 7.414

Cites: 48

Cited by: 106

Related to: 10