Interfacial thermal conductance across metal-insulator/semiconductor interfaces due to surface states
Year: 2016
Type: article
Abstract: We point out that the effective channel for the interfacial thermal conductance, the inverse of Kapitza resistance, of metal-insulator/semiconductor interfaces is governed by the electron-phonon interaction mediated by the surface states allowed in a thin region near the interface. Our detailed calculations demonstrate that the interfacial thermal conductance across Pb/Pt/Al/Au-diamond interfaces are only slightly different among these metals, and reproduce well the experimental results of the interfacial thermal conductance across metal-diamond interfaces observed by Stoner et al. [Phys. Rev. Lett. 68, 1563 (1992)] and most recently by Hohensee et al. [Nat. Commun. 6, 6578 (2015)].
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
Funders: National Natural Science Foundation of China, Defense Advanced Research Projects Agency, Japan Society for the Promotion of Science, Program for New Century Excellent Talents in University, Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning
OpenAlex ID: W2311869533