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Carrier relaxation and recombination in InGaN/GaN quantum heterostructures probed with time-resolved cathodoluminescence

Year: 1998

Type: article

Source: MRS Proceedings

DOI: 10.1557/proc-512-193

Authors: Xingang Zhang, D. H. Rich, J. T. Kobayashi, N. P. Kobayashi, P. D. Dapkus

Institution: University of Southern California

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2316215532

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Cites: 16

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Related to: 10