Year: 1996
Type: article
Abstract: To improve the conversion efficiency of thermoelectric device, segment type combination of different thermoelectric materials is very effective. However, it is necessary to consider the thermal stress when different materials are joined. So it has been suggested to join SiGe(high performance at 900-1200K) to PbTe(high performance at 600-900K) through the SiGe/PbTe FGM layers. We studied thermoelectric properties of each of SiGe/PbTe composites of the SiGe/PbTe FGM layers. The result is as follows. Electrical resistivity of the SiGe/PbTe composites in the present study was about 1000 times greater than that of SiGe or PbTe single phase. Therefore, the figure of merits of the SiGe/PbTe composites rather degraded compared to those for each single phase. This undesirable results were interpreted to be caused by the change of electronic structure at the interface of SiGe and PbTe with slight interdiffusion into each components.
DOI: 10.2497/jjspm.43.300
Authors: Hiroshi Okamura, Masafumi Miyajima, Yasutoshi Noda, Akira Kawasaki, Ryuzo Watanabe
Institution: Tohoku University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: diamond
OpenAlex ID: W2318390557