Relationship between Thermoelectric Properties and Formation of Microstructure, and Compressive Strength and Grain Size of Bi-Te Materials
Year: 1996
Type: article
Abstract: Semiconducting ceramics of p- and n-type bismuth telluride fabricated from the milled powders of (Bi2Te3)0.25(Sb2Te3)0.75+Te 2.0mass% and (Bi2Te3)0.95(Bi2Se3)0.05+HgBr2 0.07mass% with low impurity oxygen having figures of merit were as large as 2.6×10-3K-1 (p-type) and 2.0×10-3K-1 (n-type) at 25°C, respectively, have been developed by hot press. The figure of merit showed a maximun when the grain size was 5 and 10μm because thermal conductivity apparently became the lowest possibly due to enhanced phonon scattering at grain boundaries. The compressive strength of p- and n-type obeyed Hall-Petch type which was directly proportional to (-1/2) the power of grain size, and showed 8.8 and 6.1MPa whose figure of merit was maximum, respectively.
Authors: Takeo TOKIAI, Takasi UESUGI, Kunihito KOUMOTO
Institutions: Idemitsu Kosan (Japan), Nagoya University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: diamond
OpenAlex ID: W2318969148