Work

Atomistic Origins of High Rate Capability and Capacity of N-Doped Graphene for Lithium Storage

Year: 2014

Type: article

Source: Nano Letters

DOI: 10.1021/nl4038592

Authors: Xi Wang, Qunhong Weng, Xizheng Liu, Xuebin Wang, Dai-Ming Tang, Wei Tian, Chao Zhang, Wei Yi, Dequan Liu, Yoshio Bando, Dmitri Golberg

Institutions: National Institute for Materials Science, Research Center for Materials Nanoarchitectonics, University of Tsukuba

Language: English

Topic: Advancements in Battery Materials

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Japan Society for the Promotion of Science

Award: Investigations of the strain effects on the mobility of 10-nm Si transistors by in situ TEM

OpenAlex ID: W2320634911

FWCI: 20.43

Cites: 51

Cited by: 319

Related to: 10