Strain Distribution of Ge/Si Quantum Dots in Array
Year: 2016
Type: article
Abstract: Strain has valuable effects on the formation of the growth and the photo electronic properties of Ge/Si quantum dots (QDs), and it is important to understand the distribution of strain and the other properties of Ge/Si QDs theoretically. In this work, a method based on the Green’s function technique is used to solve elastic equations and the strain of different QDs shapes is calculated by a numerical algorithm. The strain of QDs which array in different density is analyzed and the strain of hemispherical QDs is compared with pyramidal QDs in calculations.
Source: Materials science forum
Authors: Tao Pan, Shao Ying Ke, Zhang Sheng Shi, Chong Wang, Yu Yang
Institution: Yunnan University
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W2321887214