Work

Initial Stages of MOCVD Growth of Gallium Nitride Using a Multi-Step Growth Approach

Year: 1997

Type: article

Source: MRS Proceedings

DOI: 10.1557/proc-468-187

Authors: J. T. Kobayashi, N. P. Kobayashi, P. D. Dapkus, X. Zhang, D. H. Rich

Institution: University of Southern California

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Defense Advanced Research Projects Agency, University of California, Santa Barbara, Office of Naval Research

OpenAlex ID: W2322167634

FWCI: 1.465

Cites: 6

Cited by: 10

Related to: 10