Year: 2016
Type: article
Abstract: X-ray researches are carries out, and the thermoelectric coefficient a and the specific conductivity q are measured for tin telluride specimens doped with bismuth to concentrations of 0–2.0 at.% Bi. Non-monotonic dependences of the unit cell parameter and the electrical parameters on the Bi impurity content are demonstrated. The introduction of bismuth to 1.0 at.% is found to favor an increase in the thermoelectric power a2q in SnTe at temperatures T > 500 K as a result of the thermoelectric coefficient growth.
Source: Ukrainian Journal of Physics
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2322549483