Work

Reversibly Switchable Electromagnetic Device with Leakage‐Free Electrolyte

Year: 2016

Type: article

Abstract: A reversibly switchable electromagnetic oxide device is demonstrated by using a thin-film transistor structure with a newly developed leakage-free electrolyte as a gate insulator. The electrical and magnetic behavior of the device can be switched from antiferromagnetic insulation to ferromagnetic metal electrically under DC voltage of ±3 V at room temperature. The result provides a novel design concept for practical memory devices.

Source: Advanced Electronic Materials

DOI: 10.1002/aelm.201600044

Authors: Takayoshi Katase, Yuki Suzuki, Hiromichi Ohta

Institution: Hokkaido University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

Funder: Japan Society for the Promotion of Science

Awards: Electric field accumulation and giant thermopower modulation of one dimensional electron gas in oxide semiconductors, Electronic property control of solid-state oxide thin-film device by water electrolysis, G5943040787