Thermoelectric Characterization of Ti and In Double-Doped Cobalt Antimony Thin Films
Year: 2016
Type: article
Abstract: CoSb3 thermoelectric thin films were prepared on polyimide flexible substrate by radio frequency (RF) magnetron sputtering technology using a cobalt antimony alloy target. Ti and In were added into CoSb3 thin films by co-sputtering. The influence of Ti and In on the thermoelectric properties of CoSb3 thin films was investigated. X-ray diffraction result shows that the major diffraction peaks of all the thin films match the standard peaks related to the CoSb3 phase. The sample has best thermoelectric properties when the Ti sputtering time was 1min and In sputtering time was 30 seconds.
Source: Materials science forum
Institution: Shenzhen University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W2326589250