Year: 2016
Type: article
Abstract: The effects of Cu doping on the thermoelectric properties of β-rhombohedral boron have been systematically investigated using nominal compositions of CuxB105 (x = 0–5). The electrical conductivity increases with increasing x up to 5 at.%, whereas the positive Seebeck coefficient decreases because of an increase in the carrier concentration. Consequently, the power factor is enhanced by a factor of four from 22 μW m−1 K−2 (x = 0) to 90 μW m−1 K−2 (x = 4) at 973 K. In addition, Cu doping of the interstitial D and E sites contributes a ~50% reduction in the thermal conductivity from 4.3 W m−1 K−1 (x = 0) to 2.1 W m−1 K−1 (x = 5) at 973 K because of increased numbers of phonon scattering events. The dimensionless figure of merit ZT is also enhanced by a factor of six from 0.006 (x = 0) to 0.038 (x = 4) at 973 K in the p-type material. The ZT value obtained is higher than that of the conventional thermoelectric boride B4C.
Source: MATERIALS TRANSACTIONS
Authors: Yoshiki Takagiwa, Norihide Kuroda, Erika Imai, Ikuzo Kanazawa, Hiroshi Hyodo, Kohei Soga, Kaoru Kimura
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
Awards: A development of thermoelectric materials by the cluster function design for quasicrystal and crystal constructed from 13 group and transition metal elementsnts, Development of new thermoelectric materials through band structure engineering and understanding structure-properties relationship
OpenAlex ID: W2332710818