Work

Characterization and Applicatons of Arsenic-Implanted Mocvd-Grown GaAs Structures

Year: 1993

Type: article

Source: MRS Proceedings

DOI: 10.1557/proc-316-51

Authors: Fereydoon Namavar, N. Kalkhoran, A. Cremins, S. Vernon

Institution: Spire Corporation (United States)

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2333739974

FWCI:

Cites: 9

Cited by:

Related to: 10