Work

In-Built N+ Pocket p-n-p-n Tunnel Field-Effect Transistor

Year: 2014

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2014.2362926

Authors: Dawit Burusie Abdi, Mamidala Jagadesh Kumar

Institution: Indian Institute of Technology Delhi

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2333809535

FWCI: 6.89

Cites: 21

Cited by: 160

Related to: 10