Work

Realizing Efficient Volume Depletion in SOI Junctionless FETs

Year: 2016

Type: article

Abstract: In this paper, we provide a simple and effective solution to realize efficient volume depletion and therefore, significantly reduce the OFF-state leakage current of a junctionless FET (JLFET) by replacing the SiO2by HfO2in the buried oxide (BOX). Using calibrated 2-D simulations, we show that the JLFET with a high-k BOX (HB JLFET) exhibits a considerably high ION/IOFFratio of ~106even for a channel length of 20 nm. Further, we demonstrate that the use of a high-k BOX leads to a reduction in both gate capacitance Cgand gate-to-drain feedback (Miller) capacitance Cgd.

Source: IEEE Journal of the Electron Devices Society

DOI: 10.1109/jeds.2016.2532965

Authors: Shubham Sahay, Mamidala Jagadesh Kumar

Institution: Indian Institute of Technology Delhi

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,350

OpenAlex ID: W2338928288

FWCI: 6.095

Cites: 13

Cited by: 92

Related to: 10