12.5 Gbits/s carrier-depletion based silicon Mach-Zehnder modulation with a 2 V driven voltage
Year: 2011
Type: conference-paper
Abstract: We demonstrate a carrier-depletion based silicon optical modulator with a figure of merit of 1.3 V•cm.The device is based on a Mach-Zehnder interferometer whose two arms incorporate lateral PN junctions and lumped electrodes.With a 3mm phase shifter, the modulator can be driven by a signal of 2 V peak-to-peak voltage.The modulation depths at 5 Gbit/s, 10 Gbit/s and 12.5 bit/s are 5.92 dB, 4.51 dB and 3.73 dB, respectively.The total insertion loss of the device is 8 dB.
Language: English
Topic: Photonic and Optical Devices
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2342875193