Study on near-infrared broadband emission spectroscopic properties of Bi-doped α-BaB2O4 single crystal induced by γ-irradiation
Year: 2010
Type: article
Abstract: 摘要 用提拉法技术生长出了掺Bi的α-BaB2O4单晶并经过γ射线辐照.测定了样品在室温下的吸收光谱、发射光谱及荧光衰减曲线.在808 nm波长光的激发下，经γ射线辐照后的α-BaB2O4单晶中发现了中心波长为1139 nm、半高宽为113 nm的近红外宽带发光现象.讨论了辐照条件和退火处理对Bi离子发光的影响.对于其发光机理进行了初步的探讨. 关键词: 近红外宽带发光 / α-BaB2O4单晶 / 辐照 / 退火处理 Abstract The bismuth-doped α-BBO single crystals were prepared by traditional Czochralski method in ambient atmosphere, and the obtained samples were irradiated by γ-ray . The absorption, emission and fluorescence decay curves were measured at room temperature. Near-infrared super-broadband emission (FWHM ~113 nm) of Bi:α-BBO single crystal subjected to γ-irradiation was observed to be center-peaked at ~1139 nm upon 808 nm excitation. The effect of irradiation and annealing treatment on the emission was discussed, and the mechanism for the wide emission band was investigated preliminarily. Keywords: near infrared super-broadband emission / α-BaB2O4 single crystal / irradiation / annealing treatment 作者及机构信息 喻军2, 周朋4, 赵衡煜4, 吴锋3, 夏海平1, 苏良碧4, 徐军4 (1)宁波大学光电子功能材料重点实验室,宁波 315211; (2)宁波大学光电子功能材料重点实验室,宁波 315211；中国科学院透明与光功能无机材料重点实验室，上海硅酸盐研究所,上海 201800; (3)中国科学院上海光学精密机械研究所,上海 201800; (4)中国科学院透明与光功能无机材料重点实验室，上海硅酸盐研究所,上海 201800 基金项目: 国家自然科学基金(批准号：60778036，60938001和50972061),中国科学院百人计划，上海市科学技术委员会（批准号：08ZR1421700和08520704400），宁波市科技局项目(批准号：2009A610007)和宁波大学王宽诚幸福基金资助的课题. Authors and contacts Yu Jun2, Zhou Peng4, Zhao Heng-Yu4, Wu Feng3, Xia Hai-Ping1, Su Liang-Bi4, Xu Jun4 (1)宁波大学光电子功能材料重点实验室,宁波 315211; (2)宁波大学光电子功能材料重点实验室,宁波 315211；中国科学院透明与光功能无机材料重点实验室，上海硅酸盐研究所,上海 201800; (3)中国科学院上海光学精密机械研究所,上海 201800; (4)中国科学院透明与光功能无机材料重点实验室，上海硅酸盐研究所,上海 201800 参考文献 [1] ［1］Ogoshi H, Ichino S, Kurotori K 2000 J .Furukawa. Rev. 20 17 [2] ［2］Xu T F, Zhang X D, Nie Q H 2006 J. Chin. Rare Earth. Soc. 24 544(in Chinese) ［徐铁峰、张旭东、聂秋华 2006中国稀土学报 24 544］ [3] ［3］Yang J H, Dai S X, Wen L,Liu Z P, Hu L L, Jiang Z H 2003 Acta Phys. Sin. 52 514(in Chinese) ［杨建虎、戴世勋、温磊、柳祝平、胡丽丽、姜中宏 2003 物理学报 52 514］ [4] ［4］Chen B Y, Lin Y H, Chen D D,Jiang Z H 2005 Acta Phys. Sin. 54 2374 (in Chinese) ［陈炳炎、刘粤惠、陈东丹、姜中宏 2005 物理学报 54 2374］ [5] ［5］Fujimoto Y, Nakatsuka M 2001 Jpn.J.Appl. Phys. 40 L279 [6] ［6］Fujimoto Y, Nakatsuka M 2003 App1.Phys.Lett. 82 3325 [7] ［7］Peng M Y,Qiu J R,Chen D P 2004 Opt.Lett. 29 1998 [8] ［8］Wang X J, Xia H P 2006 Acta Phys. Sin. 55 5263 (in Chinese) ［王雪俊、夏海平 2006 物理学报 55 5263］ [9] ［9］Yang B X, Hou B H, Liang Y Z, Shi C S 1996 Journal of China University of Science And Technology 26 498 （in Chinese）［杨炳忻、侯碧辉、粱任又、施朝淑 1996 中国科技大学学报 26 498］ [10] ］Li M H, Sun S W,Teng Y J, Xu Y H 1997 Piezoelectrics & Acoustooptics 19 201 （in Chinese）［李铭华、孙尚文、滕玉洁、徐玉恒 1997 压电与声电 19 201］ [11] ］Zhou G Q, Xu J, Chen X D 1998 J. Crystal Growth. 191 517 [12] ］Srivastava A M 1998 J. Lumin. 78 239 [13] ］ Blasse G, Meijerink A, Nomes M, Zuidema J 1994 J. Phys. Chem. Solids 55 171 [14] ］Novoselov A, Yoshikawa A, Nikl M, Pejchal J, Fukuda T 2006 J.Cryst. Growth 292 236 [15] ］Blasse G, Bril A 1968 J. Chem. Phys. 48 217 [16] ］Srivastava A M 1998 J. Lumin. 78 239 施引文献
Source: Acta Physica Sinica
DOI: 10.7498/aps.59.3538
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W2346004201