Work

Doping of Active Region in Long Wavelength InP-Based Transistor Lasers

Year: 2016

Type: article

Abstract: The effects of doping in the multiquantum well (MQW) active region on the properties of InP-based long wavelength deep ridge transistor lasers (TLs) are numerically studied. Doping in the MQWs is shown to lead to a decrease of the slope efficiency and a notable increase of the current gain of the TLs, which makes MQW doping a useful tool for facilitating the design of TLs. When there are nonradiative recombination centers on the exposed MQW side walls of the TLs, doping in the MQWs is found to be able to enhance the performance of the TLs by reducing the threshold current and increasing the current gain greatly. With doping in the MQWs, the carrier diffusivity is decreased, making the defects less effective in consuming the carriers. The results show that doping in the MQWs helps to obtain high-quality TLs. The reduced carrier diffusion that results from doping also helps to improve the quality of a normal diode laser in case a deep ridge structure is needed.

Source: IEEE photonics journal

DOI: 10.1109/jphot.2016.2565260

Authors: Lijun Qiao, Song Liang, Hongliang Zhu, Wei Wang

Institutions: Chinese Academy of Sciences, Institute of Semiconductors

Language: English

Topic: Semiconductor Lasers and Optical Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,075

Funder: National Natural Science Foundation of China