Year: 2016
Type: article
Abstract: We demonstrate that a field-effect transistor (FET) made of few-layer black phosphorus (BP) encapsulated in hexagonal boron nitride (h-BN) in vacuum exhibits a room-temperature hole mobility of 5200 cm 2 /(Vs), being limited just by the phonon scattering. At cryogenic temperatures, the FET mobility increases up to 45 000 cm 2 /(Vs), which is five times higher compared to the mobility obtained in earlier reports. The unprecedentedly clean h-BN–BP–h-BN heterostructure exhibits Shubnikov–de Haas oscillations and a quantum Hall effect with Landau level (LL) filling factors down to v = 2 in conventional laboratory magnetic fields. Moreover, carrier density independent effective mass of m * = 0.26 m 0 is measured, and a Landé g -factor of g = 2.47 is reported. Furthermore, an indication for a distinct hole transport behavior with up- and down-spin orientations is found.
Source: Nano Letters
Authors: Gen Long, Denis Maryenko, Junying Shen, Shuigang Xu, Jianqiang Hou, Zefei Wu, Wing Ki Wong, Tianyi Han, Jiangxiazi Lin, Yuan Cai, Rolf Lortz, Ning Wang
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2351044835