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THE EFFECTS OF INTERVALLEY INTERACTIONS ON THE ELECTRONIC STRUCTURES IN QUANTUM WELLS Ge0.3Si0.7/Si/Ge0.3Si0.7 GROWN ON Ge0.3Si0.7(001)

Year: 1997

Type: article

Abstract: Using the generalized k·p method based on empirical pseudopotential theory associated with boundary conditions of current density operator,the electronic bound levels are calculated for quantum wells Ge0.3Si0.7/Si/Ge0.3Si0.7 grown on Ge0.3Si0.7(001).The energy level splitting by intervalley interactions is studied in detail and the dispersions of electronic bound levels in the well plane are also discussed.

Source: Acta Physica Sinica

DOI: 10.7498/aps.46.775

Authors: XU ZHI ZHONG, 复旦大学物理系

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: hybrid

OpenAlex ID: W2185217281

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