Work

The Cryogenic DC Behavior of Cryo3/AZ1 InP 0.1-by-80-Micrometer-Gate High Electron Mobility Transistor Devices

Year: 2007

Type: article

Source: Interplanetary Network Progress Report

Author: J. Shell

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2369081958

FWCI:

Cites: 12

Cited by: 16

Related to: 10