Work

AN INCIPIENT EDGE DISLOCATION IN EPITAXIAL WURTZITE GaN

Year: 1998

Type: article

Source: Acta Physica Sinica

Author: Quan Hao

Language: German

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2377879030

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