Work

Optimization of Dopant Diffusion and Ion Implantation to Increase Integration Rate of Field-Effect Heterotransistors. An Ap-Proach to Simplify Construction of the Heterotransistors

Year: 2015

Type: article

Abstract: In this work we introduce an approach to decrease dimensions of a field-effect heterotransistors.The approach based on manufacturing field-effect transistors in heterostructures and optimization of technological processes.At the same time we consider possibility to simplify their constructions.

Source: International Journal of Recent advances in Physics

DOI: 10.14810/ijrap.2015.4103

Authors: E.L Pankratov, E.A Bulaeva

Institutions: Nizhny Novgorod Academy of the Ministry of Internal Affairs of Russia, Nizhny Novgorod State University of Architecture and Civil Engineering

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

Funders: Ministry of Education and Science of the Russian Federation, Lobachevsky State University of Nizhny Novgorod

Awards: G337252799, G708659017, G8211583813