Year: 2017
Type: article
Abstract: Bottom-up synthesized graphene nanoribbons and graphene nanoribbon heterostructures have promising electronic properties for high-performance field-effect transistors and ultra-low power devices such as tunneling field-effect transistors. However, the short length and wide band gap of these graphene nanoribbons have prevented the fabrication of devices with the desired performance and switching behavior. Here, by fabricating short channel ( L ch ~ 20 nm) devices with a thin, high- κ gate dielectric and a 9-atom wide (0.95 nm) armchair graphene nanoribbon as the channel material, we demonstrate field-effect transistors with high on-current ( I on > 1 μA at V d = −1 V) and high I on /I off ~ 10 5 at room temperature. We find that the performance of these devices is limited by tunneling through the Schottky barrier at the contacts and we observe an increase in the transparency of the barrier by increasing the gate field near the contacts. Our results thus demonstrate successful fabrication of high-performance short-channel field-effect transistors with bottom-up synthesized armchair graphene nanoribbons.
Source: Nature Communications
Authors: Juan Pablo Llinas, Andrew Fairbrother, Gabriela Borin Barin, Wu Shi, Kyunghoon Lee, Shuang Wu, Byung Yong Choi, Rohit Braganza, Jordan Lear, Nicholas Kau, Wonwoo Choi, Chen Chen, Zahra Pedramrazi, Tim Dumslaff, Akimitsu Narita, Xinliang Feng, Klaus Müllen, Felix Fischer, Alex Zettl, Pascal Ruffieux, Eli Yablonovitch, Michael Crommie, Roman Fasel, Jeffrey Bokor
Institutions: Lawrence Berkeley National Laboratory, University of California, Berkeley, Empa, Samsung (South Korea), Samsung Electronics (South Korea), Max Planck Institute for Polymer Research, Center for Advancing Electronics Dresden, Technische Universität Dresden, Kavli Energy NanoScience Institute, University of Bern
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $6,990
Funders: National Science Foundation, U.S. Department of Energy, Graphene Flagship, Deutsche Forschungsgemeinschaft, Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung, Defense Advanced Research Projects Agency, Office of Science, Office of Naval Research, Basic Energy Sciences, Army Research Office, Army Research Laboratory
Awards: G1286236842, G1286251239, G1414775356, G1445641779, G1816284028, G1819396989, G1830671023, G2575309732, G2618837358, G30714459, G3083819904, G3314220616, G365575497, G40984697, G419881185, G42916606, G4501827968, G498139845, G5206177008, G5222170445, G5259331294, G5261056217, G5385673730, G5610834244, G5657833652, G5724895686, G5849692847, G650090426, G6652958823, G7452299184, G7468354992, G7647883630, G805243471, G8257659198, G8876996369, G969889393
OpenAlex ID: W2396500671