Ion Implantation Defects in 4H-SiC DIMOSFET
Year: 2016
Type: article
Abstract: In this paper the influence of point defects generated by the ion implantation process in 4H-SiC DIMOSFET has been studied in detail. The point defects generated by the source or body implantation process have been detected by micro-photoluminescence and the effect of these defects on the electrical characteristics of the DIMOSFET has been studied. In particular it has been observed that a reduction of the source ion implanted dose produces a large reduction of point defects in the source region and a considerable improvement of the electrical characteristic of the DIMOSFET.
Source: Materials science forum
Institution: Institute for Microelectronics and Microsystems
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W2403558074