Constituent Element Addition to n-Type Bi2Te2.67Se0.33 Thermoelectric Semiconductor without Harmful Dopants by Mechanical Alloying
Year: 2016
Type: article
Abstract: N-type Bi 2 Te 2.67 Se 0.33 thermoelectric materials with added constituent elements were prepared without the addition of harmful dopants using mechanical alloying (MA) followed by hot pressing (HP).All the prepared samples were identified from the Bi 2 Te 3 -Bi 2 Se 3 solid-solution diffraction peak.They were all single-phase n-type semiconductors.The maximum dimensionless figures of merit, ZT, of Bi 2 Te 2.67 (Se 0.33 ) 1+0.06 , Bi 2 (Te 2.67 ) 1+0.06 Se 0.33 , and Bi 2 (Te 2.67 Se 0.33 ) 1+0.03 were 0.93 at 440 K, 0.99 at 441 K, and 0.97 at 442 K, respectively.These results indicate that the figure of merit of Bi 2 Te 2.67 Se 0.33 doped with constituent elements, prepared using the MA-HP process, is nearly same as the highest value, i.e., 1.0, reported in the literature.
Source: MATERIALS TRANSACTIONS
Authors: Kazuhiro Hasezaki, Sena Wakazuki, Takuya Fujii, Masato Kitamura
Institution: Tokushima University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2405119536