Ultralow power complementary inverter circuits using axially doped p- and n-channel Si nanowire field effect transistors
Year: 2016
Type: article
Source: Nanoscale
DOI: 10.1039/c6nr01040g
Institution: Sungkyunkwan University
Language: English
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2405948072