Work

Band engineering in transition metal dichalcogenides: Stacked versus lateral heterostructures

Year: 2016

Type: article

Abstract: We calculate a large difference in the band alignments for transition metal dichalcogenide (TMD) heterojunctions when arranged in the stacked layer or lateral (in-plane) geometries, using direct supercell calculations. The stacked case follows the unpinned limit of the electron affinity rule, whereas the lateral geometry follows the strongly pinned limit of alignment of charge neutrality levels. TMDs therefore provide one of the few clear tests of band alignment models, whereas three-dimensional semiconductors give less stringent tests because of accidental chemical trends in their properties.

Source: Applied Physics Letters

DOI: 10.1063/1.4953169

Authors: Yuzheng Guo, John Robertson

Institution: University of Cambridge

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

Funder: European Commission

Award: GRAPHENE CHEMICAL VAPOUR DEPOSITION: ROLL TO ROLL TECHNOLOGY