Control of the Pore Texture in Nanoporous Silicon via Chemical Dissolution
Year: 2015
Type: article
Abstract: The surface and textural properties of porous silicon (pSi) control many of its physical properties essential to its performance in key applications such as optoelectronics, energy storage, luminescence, sensing, and drug delivery. Here, we combine experimental and theoretical tools to demonstrate that the surface roughness at the nanometer scale of pSi can be tuned in a controlled fashion using partial thermal oxidation followed by removal of the resulting silicon oxide layer with hydrofluoric acid (HF) solution. Such a process is shown to smooth the pSi surface by means of nitrogen adsorption, electron microscopy, and small-angle X-ray and neutron scattering. Statistical mechanics Monte Carlo simulations, which are consistent with the experimental data, support the interpretation that the pore surface is initially rough and that the oxidation/oxide removal procedure diminishes the surface roughness while increasing the pore diameter. As a specific example considered in this work, the initial roughness ξ ∼ 3.2 nm of pSi pores having a diameter of 7.6 nm can be decreased to 1.0 nm following the simple procedure above. This study allows envisioning the design of pSi samples with optimal surface properties toward a specific process.
Source: Langmuir
Institutions: École Nationale Supérieure de Chimie de Montpellier, Centre National de la Recherche Scientifique, Institut Charles Gerhardt Montpellier, University of California San Diego, Institut Européen des Membranes, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Laboratoire Léon Brillouin, CEA Paris-Saclay, Massachusetts Institute of Technology
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
Funder: Division of Materials Research
Award: G1677774248
OpenAlex ID: W2418147984
