Work

Modelling of Anomalous Boron Diffusion in Si/Si 1-x Ge x HBTs

Year: 1993

Type: conference-paper

Source: European Solid-State Device Research Conference

Authors: H.J. Gregory, M. Mouis, D. Mathiot, David J. Robbins, J. L. Glasper, P. Ashburn, S. Nigrin

Institutions: University of Southampton, Orange (France), GEC (United Kingdom)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2425681403

FWCI:

Cites:

Cited by: 1

Related to: 20