Work

3D Multi-gate NMOS Mobility Enhancement with High-tensile ILD-SiNx Stressor

Year: 2007

Type: conference-paper

Source: International Conference on Solid State Devices and Materials (SSDM)

DOI: 10.7567/ssdm.2007.i-1-2

Authors: Wen-Shiang Liao, Sheng-Yi Huang, Kun-Ming Chen, Huan-Chiu Tsen, Lee Chung

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2461123473

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