Work

Understanding and Controlling Nanoscale Crystal Growth Using Mechanical Forces

Year: 2014

Type: report

Abstract: presence of nano-scale geometric boundaries affect the crystallographic orientation in selective area epitaxy? InN is chosen as a case study to demonstrate the efficacy and unveil the science in nano-scale SAG. For the first time, we achieve uniform InN nanowires in the large scale with nano-trenches. The engineering of InN nuclei with interfacial energy and the possibility of orientation filtering are also studied.

DOI: 10.2172/1160219

Authors: A. John Hart, Mostafa Bedewy

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

Funders: National Science Foundation, U.S. Department of Energy, National Institutes of Health, Office of Naval Research, Division of Materials Research, Division of Civil, Mechanical and Manufacturing Innovation, Oak Ridge National Laboratory

Awards: TAS::89 0222::TAS; NEW; UNDERSTANDING AND CONTROLLING NANOSCALE CRYSTAL GROWTH USING MECHANICAL FORCES; PI- ANASTASIOS HART, Operation of the Cornell High Energy Synchrotron Radiation Laboratory (CHESS), G2764249345, G4082173572, Limiting Growth Mechanisms and Continuous Manufacturing of Aligned Carbon Nanotube Films, CAREER: Analysis and Modeling for Image Processing Problems

OpenAlex ID: W2464418576

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