Year: 2016
Type: article
Abstract: An amorphous/epitaxial superlattice system is proposed for application to thermoelectric devices, and the superlattice based on a PbGeTeS system was prepared by the alternate deposition of PbS and GeTe using a hot wall epitaxy technique. The structure was analyzed by high-resolution transmission electron microscopy (HRTEM) and X-ray analysis, and it was found that the superlattice consists of an epitaxial PbTe-based layer and a GeS-based amorphous layer by the reconstruction of the constituents. A reduction in thermal conductivity due to the amorphous/epitaxial system was confirmed by a 2ω method. Electrical and thermoelectric properties were measured for the samples.
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
Awards: High performance Si thermoelectric material design based on phonon-carrier wave control in novel heteronanostructures, Development of coherently-connected nanodot structure for rare-metal-free thermoelectric materials, Independent control of phonon and electron transports based on the interface physics by using heteronanostrucutre interfaces
OpenAlex ID: W2467526758