Work

Fabrication and Thermoelectric Properties of Cu-doped Bi-Te-Se Bulk Materials

Year: 2016

Type: article

Abstract: Dense n-type Bi2Te2.85Se0.15 bulk thermoelectric materials with Cu doping were fabricated by mechanical alloying (MA) and spark plasma sintering (SPS) technique. The effect of Cu doping on microstructure and thermoelectric properties of CuxBi2Te2.85Se0.15 has been investigated. At a sintering temperature of 300 °C, the effect of Cu doping on thermoelectric properties was not significant. At 400 °C, however, the carrier concentration decreased significantly with increasing Cu content, and thus causing a significant increase in the Seebeck coefficient. A largest dimensionless figure of merit value of 0.58 was achieved at room temperature for Cu0.03Bi2Te2.85Se0.15 sample sintered at 400°C.

Source: Journal of the Japan Society of Powder and Powder Metallurgy

DOI: 10.2497/jjspm.63.613

Authors: Zhi-Lei WANG, Yuki YOKOYAMA, Takahiro AKAO, Tetsuhiko ONDA, Zhong-Chun CHEN

Institution: Tottori University

Language: English

Topic: Advanced Thermoelectric Materials and Devices

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: diamond

Funders: Shimane University, Amada Foundation, Japan Science and Technology Agency