Optimizing the Dopant and Carrier Concentration of Ca5Al2Sb6 for High Thermoelectric Efficiency
Year: 2016
Type: article
Abstract: The effects of doping on the transport properties of Ca5Al2Sb6 are investigated using first-principles electronic structure methods and Boltzmann transport theory. The calculated results show that a maximum ZT value of 1.45 is achieved with an optimum carrier concentration at 1000 K. However, experimental studies have shown that the maximum ZT value is no more than 1 at 1000 K. By comparing the calculated Seebeck coefficient with experimental values, we find that the low dopant solubility in this material is not conductive to achieve the optimum carrier concentration, leading a smaller experimental value of the maximum ZT. Interestingly, the calculated dopant formation energies suggest that optimum carrier concentrations can be achieved when the dopants and Sb atoms have similar electronic configurations. Therefore, it might be possible to achieve a maximum ZT value of 1.45 at 1000 K with suitable dopants. These results provide a valuable theoretical guidance for the synthesis of high-performance bulk thermoelectric materials through dopants optimization.
Source: Scientific Reports
DOI: 10.1038/srep29550
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,690
Funders: National Science Foundation, National Natural Science Foundation of China, Shanghai Municipal Education Commission, Science and Technology Commission of Shanghai Municipality, Henan University, Program for New Century Excellent Talents in University, National Natural Science Foundation of China-Guangdong Joint Fund, Division of Materials Research
Awards: G100223438, G1335172943, G2106239457, G2243726629, G2620909115, Speeding up GW quasiparticle calculations to meet the challenge of fast and accurate materials prediction, ZnO本征半导体 d0 铁磁性来源及调制机制, G3449411131, G4260943137, G5046900747, G5558676295, 过渡金属氮化物、硼化物及碳化物硬度关联因素研究, G7072950013, G7636648350, G7758282144, G8110031646, G8110310370, G8357968900, G8396549781, CAREER:Excited States Properties of Semiconductors and Nanostructures: Methodology Developments, Practical Applications, and Education, G8951480458
OpenAlex ID: W2469436382
