Work

Mecahnical stress evaluation of Si MOSFET structure using UV Raman spectroscopy measurements and calibrated TCAD simulation

Year: 2009

Type: conference-paper

Source: International Conference on Solid State Devices and Materials (SSDM)

DOI: 10.7567/ssdm.2009.p-3-5

Authors: A. Satoh, T. Tada, V. Poborchii, T. Kanayama, H. Arimoto

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2473801900

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