Work

Effects of proton irradiation and thermal annealing on off-state step-stressed AlGaN/GaN high electron mobility transistors

Year: 2016

Type: article

Source: Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

DOI: 10.1116/1.4959028

Authors: Byung-Jae Kim, Shihyun Ahn, Fan Ren, Stephen J. Pearton, Gwangseok Yang, Jihyun Kim

Institutions: University of Florida, Korea University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: U.S. Department of Defense, Defense Threat Reduction Agency

Award: G5756752099

OpenAlex ID: W2477661997

FWCI: 0.401

Cites: 29

Cited by: 16

Related to: 10